Electron‐induced surface electrovoltaic effects are determined as a function of temperature and dopant concentration for epitaxial Bi/GaAs(110) by using inverse photoemission. Results obtained with an incident electron flux of 1014‐1015cm−2 s−1show opposite shifts of empty state features of the Bi overlayers onp‐ andn‐type GaAs(110). These shifts depend upon the bulk dopant concentration and overlayer thickness, and they increase as the temperature is cooled from 300 to 60 K. They reveal a nonequilibrium charge distribution associated with electron–hole creation in the GaAs depletion region. Reversible, symmetric steady‐state band bending movements forn‐ andp‐type GaAs(110) are determined as a function of temperature for a variety of coverages by using thermal cycling 300→60→300 K. The suppression of electron–hole recombination at low temperature results in significant band flattening similar to that observed in low temperature photoemission studies for metal–GaAs(110) interfaces.