We have shown that silicon homoepitaxial growth can be achieved by conventional rf diode sputtering at a low growth temperature (Ts∼400 °C). Spectroscopic ellipsometry and the electron channeling pattern are presented to show that the film deposited on a HF‐treated substrate is a single‐crystalline film while the film deposited without HF treatment is a polycrystalline film. Ar‐discharge cleaning of the substrate is also found to greatly improve the surface morphology of the deposited films.