TMGa /TEGa interactions in metalorganic molecular beam epitaxy
作者:
M. Kamp,
G. Mo¨rsch,
H. Lu¨th,
V. Frese,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 3
页码: 367-369
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114215
出版商: AIP
数据来源: AIP
摘要:
Using TMGa and TEGa simultaneously for the metalorganic molecular beam epitaxy growth of GaAs, interactions between the precursors have been observed. Whereas the resulting growth rate is unaffected, the obtained carrier concentrations reveal deviations up to 85% from the superpositioned values. Separate and common injection of both group III alkyls have been investigated. From these, interactions within the common group III injector, if they take place at all, are found to be negligible compared to interactions on the surface. ©1995 American Institute of Physics.
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