首页   按字顺浏览 期刊浏览 卷期浏览 Gallium arsenide review: past, present and future
Gallium arsenide review: past, present and future

 

作者: D.M.Taylor,   D.O.Wilson,   D.H.Phillips,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  (IET Available online 1980)
卷期: Volume 127, issue 5  

页码: 266-269

 

年代: 1980

 

DOI:10.1049/ip-i-1.1980.0053

 

出版商: IEE

 

数据来源: IET

 

摘要:

The tremendous growth of communications systems in recent years has put a demand on the electronics industry to provide higher speed integrated circuits than are currently available with today's silicon technology. To help meet this demand, the electronics industry is developing new semiconductor materials such as gallium arsenide which already report clock frequencies of 1-3 GHz in GaAs integrated circuits. There have been many exciting breakthroughs in GaAs technology in the last five years including ion implantation techniques, annealing, lithography, circuit design, GaAs materials, and GaAs i.c. testing. Within the next five years GaAs is forecast to be a dominant technology in many high speed applications.

 

点击下载:  PDF (579KB)



返 回