首页   按字顺浏览 期刊浏览 卷期浏览 Arsenic doped ZnSe grown by molecular‐beam epitaxy
Arsenic doped ZnSe grown by molecular‐beam epitaxy

 

作者: S. M. Shibli,   M. C. Tamargo,   B. J. Skromme,   S. A. Schwarz,   C. L. Schwartz,   R. E. Nahory,   R. J. Martin,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 2  

页码: 187-191

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584851

 

出版商: American Vacuum Society

 

关键词: MOLECULAR BEAM EPITAXY;ZINC SELENIDES;DOPED MATERIALS;ARSENIC;ZINC ARSENIDES;LOW TEMPERATURE;PHOTOLUMINESCENCE;ELECTRICAL PROPERTIES;EPITAXIAL LAYERS;ZnSe:As

 

数据来源: AIP

 

摘要:

We have been able to incorporate As into molecular‐beam epitaxy (MBE) grown ZnSe in the range of 1017–1021atoms/cm3using Zn3As2as the As source. This contrasts with very low As levels we obtained using an As cracker cell. The As incorporation is highly nonlinear with Zn3As2flux and depends on the excess Se used. Several samples doped with Zn3As2show low temperature photoluminescence with near band edge emission dominated by shallow acceptor levels. We will describe the details of several growth variations studied and their influence on As incorporation.

 

点击下载:  PDF (380KB)



返 回