The role of Ga in CIGS solar cells is complex. In addition to its primary role of alloying agent to increase the band gap we also observe its influence on passivation, transport, trapping and doping. At low levels it can positively influence all of these mechanisms and improve performance. As its level is increased, there are complex tradeoffs among these that must be controlled to maintain good performance. We have applied photocapacitance techniques to study the junction interface region and the role that Ga plays in its formation and operation. We observe a correlation between the defect that provides doping and the recombination centers, which control Voc. The dominant centers are deep in the band gap and are located near the metallurgical junction. It is proposed that a reduction of the correlated doping defect will result in improved interface properties. ©1999 American Institute of Physics.