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On the determination of the energy band offsets in Hg1−xCdxTe heterojunctions

 

作者: T. N. Casselman,   A. Sher,   J. Silberman,   W. E. Spicer,   A.‐B. Chen,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1983）
卷期: Volume 1, issue 3  

页码: 1692-1695

 

ISSN:0734-2101

 

年代: 1983

 

DOI:10.1116/1.572259

 

出版商: American Vacuum Society

 

关键词: heterojunctions;photoionization;energy gap;band structure;accuracy;anderson model;electrical properties;mercury tellurides;cadmium tellurides

 

数据来源: AIP

 

摘要:

The energy band offsets play a critical role in the electrical properties of heterojunctions. We raise here serious questions regarding the precision and accuracy of the measured and calculated energy band offsets in HgCdTe heterostructures. We argue that the Anderson model prescription for the offsets is not useful and is not correct for abrupt heterojunctions when narrow band gap semiconductors are the constituents of the heterostructure. New values for the photoionization energy of Hg1−xCdxTe are given and the reliability of these values for determining the offset is discussed.

 

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