Asymmetry in the SiO2tunneling barriers to electrons and holes
作者:
K. K. Ng,
H. C. Card,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 4
页码: 2153-2157
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327888
出版商: AIP
数据来源: AIP
摘要:
The potential barriers of ultrathin (%40 A˚) SiO2layers to electrons and holes tunneling between the semiconductor and the metal have been measured independently on the same MOS samples by a new experimental technique introduced in this paper. The method combines dark measurements of current and capacitance versus voltage with measurements of photocurrent suppression under optical illumination. The results show that the tunneling barriers for holes are consistently much larger than those for electrons.
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