Detection of defects at homoepitaxial interface by deep‐level transient spectroscopy
作者:
Fang Lu,
Dawei Gong,
Henghui Sun,
Xun Wang,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 1
页码: 213-217
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359372
出版商: AIP
数据来源: AIP
摘要:
The interfacial defects at thep‐Si epitaxial layer/p‐Si substrate interface have been studied by deep‐level transient spectroscopy (DLTS). By solving Poisson equation, the electron concentration at the defect level varied with external voltage is derived. The emission and capture of electrons at the defect level, which are not observable in conventional DLTS, can be detected simultaneously in a single temperature scan by properly choosing the experimental parameters. The experimental results show that the energy level of the interfacial defects is located atEc−0.30 eV. ©1995 American Institute of Physics.
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