Simulation of near ballistic electron transport in a submicron GaAs diode with ALxGa1−xAs/GaAs heterojunction cathode
作者:
K.Tomizawa,
Y.Awano,
N.Hashizume,
M.Kawashima,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1985)
卷期:
Volume 132,
issue 1
页码: 37-41
年代: 1985
DOI:10.1049/ip-i-1.1985.0009
出版商: IEE
数据来源: IET
摘要:
A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an AlxGa1−xAs/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson's equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed.
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