Electroluminescence in the visible range during anodic oxidation of porous silicon films
作者:
A. Halimaoui,
C. Oules,
G. Bomchil,
A. Bsiesy,
F. Gaspard,
R. Herino,
M. Ligeon,
F. Muller,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 3
页码: 304-306
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105578
出版商: AIP
数据来源: AIP
摘要:
Porous silicon/silicon structures under anodic oxidation conditions give rise to an electroluminescence phenomenon in the visible range. Using an optical multichannel analyzer the spectral distribution of the emitted light was measured−insitu−during the anodic oxidation step. Recorded spectra show a maximum which shifts continuously from red‐orange at the beginning of the process towards the yellow range. The visible emission well above the band gap of bulk silicon is attributed to a quantum size effect in the very small size (5–20 A˚) silicon island which constitutes the porous silicon skeleton. The light emission is interrupted when the current flow stops due to the formation of a continuous oxide layer at the porous silicon/silicon interface.
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