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Electroluminescence in the visible range during anodic oxidation of porous silicon films

 

作者: A. Halimaoui,   C. Oules,   G. Bomchil,   A. Bsiesy,   F. Gaspard,   R. Herino,   M. Ligeon,   F. Muller,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 3  

页码: 304-306

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105578

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Porous silicon/silicon structures under anodic oxidation conditions give rise to an electroluminescence phenomenon in the visible range. Using an optical multichannel analyzer the spectral distribution of the emitted light was measured−insitu−during the anodic oxidation step. Recorded spectra show a maximum which shifts continuously from red‐orange at the beginning of the process towards the yellow range. The visible emission well above the band gap of bulk silicon is attributed to a quantum size effect in the very small size (5–20 A˚) silicon island which constitutes the porous silicon skeleton. The light emission is interrupted when the current flow stops due to the formation of a continuous oxide layer at the porous silicon/silicon interface.

 

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