In this letter, we report the surface‐mode stimulated emission from optically pumped Ga0.11In0.89N at room temperature. The GaInN was deposited on the intermediate layer of GaN grown on the AlN buffer layer over sapphire substrate using horizontal metalorganic vapor phase epitaxy method. The peak wavelength and the full width at half‐maximum of surface‐mode stimulated emission was 406 nm and 25.6 meV, respectively, and the threshold of excitation power density was about 0.52 MW/cm2. ©1995 American Institute of Physics.