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Band‐structure dependence of impact ionization rate in GaAs

 

作者: K. Kim,   K. Kahen,   J. P. Leburton,   K. Hess,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 59, issue 7  

页码: 2595-2596

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337011

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The band‐structure dependence of the electron impact ionization rate in GaAs is studied by using local and nonlocal pseudopotential band structures and a Monte Carlo simulation code for the impact ionization rate &agr;. We find that the difference in &agr; for the two band structures reflects mainly the difference in the density of states.

 

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