A series of lattice-matched or compressively strained InGaAs layers were grown by gas source molecular beam epitaxy on V grooved InP substrates, with grooves bounded by {211}Aor {111}Bfacets. The stress field associated with the layers was measured by the degree of polarization technique, and compared to the predictions of analytical or finite element models. Good agreement was found for the {211}AV grooves, but both the nominally lattice-matched and compressively strained layers grown on {111}B V grooves displayed similar degree of polarization maps. Analytical electron microscopy demonstrated that the {211}A V-groove samples had the targeted composition, but the {111}B samples showed much higher In/Ga ratios at the bottom of the groove than the expected values. Indium enrichment at the bottom of the groove led to defect formation there, and left the V groove of both the lattice-matched and compressively strained samples under a net compressive force. ©1997 American Institute of Physics.