Epitaxial Si films doped with Er have been grown at low substrate temperatures by plasma enhanced chemical vapor deposition. The Er gas source is a sublimed organometallic compound fed into the process chamber. High doping concentrations without silicide precipitation are possible because of the low deposition temperatures. The process relies on the beneficial effects of low energy ion bombardment to reduce the growth temperature. The ions as well as reactive chemical species are produced by an electron cyclotron resonance plasma stream source. A hydrogen/argon plasma is used to perform aninsitupredeposition clean to remove oxide from the Si surface. Film quality and impurity concentration are determined by Rutherford backscattering spectrometry and secondary ion mass spectrometry.