Complete solid‐phase epitaxial regrowth of ion‐implanted layers in GaAs has been obtained in the temperature range 150–400 °C. Implantation of tellurium at an energy and dose slightly greater than the amorphization threshold was used to produce an amorphous layer in the near‐surface region of the GaAs samples. Complete crystallization was achieved over the entire temperature range using a resistively heated sample holder and cw laser irradiation.Insitutime‐resolved optical reflectivity measurements were used to observe and measure the epitaxial growth rate of the process. It has been found that the solid‐phase epitaxy process follows an activation law whose activation energy is 1.6 eV.