The results of a low‐temperature (4.5 K) photoluminescence study of Te‐doped GaSb layers grown by liquid phase electroepitaxy are reported. A doubly ionizable native residual acceptor (A/A−) with shallow and deep levels is observed at 34 and 97 meV, respectively, another native acceptor level for GaSb (B) is seen at 54 meV, and two Te‐related acceptor levels (CandD) are found at 68 and 83 meV, respectively. In addition, a few Te‐related deep levels are also seen between 114–129 meV at higher Te concentrations. The relative dominance of each of these transitions depends on the degree of Te compensation and the incident excitation intensity. At low excitation intensities, the spectra are dominated by deep impurity levels and with increasing intensity the transitions associated with the shallow acceptors become more prominent. The limited data on the PL integrated intensity dependance on excitation intensity further confirms the nature of these transitions. And finally, we also present preliminary results of our PL studies on Te‐doped GaInAsSb alloys. ©1995 American Institute of Physics.