We report a new method of depositing amorphous hydrogenated silicon carbide (a‐SiC:H) at low substrate temperature in a plasma‐enhanced chemical vapor deposition reactor. By applying an external dc voltage to the rf‐excited powered electrode, we can shift the optimal deposition temperature from 250 °C to as low as 100 °C. We find thata‐SiC:H films deposited at positive powered‐electrode potential and low substrate temperature exhibit less microstructure, wider optical band gaps, and faster deposition rates than films deposited at conventional conditions.