We report the growth and characterization of epitaxial Ba0.5Sr0.5TiO3/SrRuO3/ZrO2on Si for potential charge storage applications. Both Ba0.5Sr0.5TiO3(BST) and SrRuO3(SRO) are grown (110)‐oriented on yttrium‐stabilized ZrO2(YSZ) (100)‐buffered Si. These films show a high degree of crystallinity with minimal interdiffusion at the interfaces as evidenced from x‐ray diffraction, Rutherford backscattering, and transmission electron microscopy. Studies on the in‐plane crystallographic relations between the layers revealed an interesting rectangle‐on‐cube epitaxy between BST/SRO and YSZ. The dielectric constant and loss tangent of the BST dielectric layer are 360 and 0.01 at 10 kHz, respectively. The leakage current density is lower than 4×10−7A/cm2at 1 V. A strong frequency dependence on both dielectric constant and loss tangent is observed in 1–10 MHz frequency range. This is attributed to the effect of a series resistance in the measurement loop, which is likely related to the bottom SrRuO3electrode. ©1995 American Institute of Physics.