High‐performance diffusion disordered AlxGa1−xAs lasers via a self‐aligned process and conventional open‐tube annealing
作者:
R. S. Burton,
T. E. Schlesinger,
D. J. Holmgren,
S. C. Smith,
R. D. Burnham,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 4
页码: 2015-2018
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353142
出版商: AIP
数据来源: AIP
摘要:
Process conditions for fabricating Si‐O impurity‐induced layer disorder defined AlxGa1−xAs‐GaAs buried heterostructure quantum well lasers utilizing a fully self‐aligned planar process and conventional As free open‐tube‐furnace annealing are presented. An SiO2layer, deposited by sputtering, was used as a diffusion source for Si and O impurities as well as a source for Ga vacancies that enhance impurity diffusion and allow for a reduction in the required annealing temperature and time. A self‐aligned native oxide of the AlxGa1−xAs cladding layer was used to form a Zn diffusion mask and dielectric layer. Lasers fabricated using this process exhibited threshold currents as low as 2.72 mA and external differential quantum efficiencies of 79% at room temperature in continuous operation.
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