THE ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON
作者:
O. J. Marsh,
R. Baron,
G. A. Shifrin,
J. W. Mayer,
期刊:
Applied Physics Letters
(AIP Available online 1968)
卷期:
Volume 13,
issue 6
页码: 199-201
ISSN:0003-6951
年代: 1968
DOI:10.1063/1.1652569
出版商: AIP
数据来源: AIP
摘要:
The electrical behavior of 20–50‐keV Bi implanted layers in silicon has been evaluated using Hall effect and sheet resistivity measurements. Implants of greater than 1014/cm2performed at room temperature show a large increase in the number of carriers/cm2for short anneals at ≈600°C that is associated with the reordering of the lattice. Although Rutherford scattering measurements (performed at Chalk River Nuclear Laboratories) indicate that ≈80% of the Bi atoms are substitutional, only ≈20% are effective electrically. The peak value of the carrier density distribution is ten times the corresponding maximum solid solubility.
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