Intrinsic Josephson effect devices fromTl2Ba2CaCu2O8(Tl-2212) thin films were investigated. The device was produced by epitaxially growing a Tl-2212 thin film on aLaAlO3substrate with the surface cut at a small angle to theLaAlO3(001) plane, and by patterning a microbridge in the proper direction. TheI–Vcharacteristics of the microbridges exhibit large hysteresis at low temperatures, and the temperature dependence of the critical currentIc(T)is in good agreement with the theoretical Ambegaokar–Baratoff relation for superconductor–insulator–superconductor (SIS) junctions. TheI–Vcurves also show multibranches for longer microbridges. ©1997 American Institute of Physics.