The dissolution behavior of the void defects by hydrogen annealing in Czochralski grown silicon crystals
作者:
K. Nakamura,
T. Saishoji,
J. Tomioka,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 26
页码: 3525-3527
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119221
出版商: AIP
数据来源: AIP
摘要:
The annihilation of grown-in defects by hydrogen annealing have been explained as the dissolution of oxygen precipitates, because it has been generally thought that grown-in defects in Czochralski silicon crystals are gigantic oxygen precipitates. However, it is necessary to re-examine the mechanism of the annihilation of the defects by hydrogen annealing, because recently it has been shown that the grown-in defects were voids of octahedral shape. In this letter, a simulation model is presented which describes the annihilation process of void defects by hydrogen annealing. ©1997 American Institute of Physics.
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