Structures and Energies of Symmetrical 〈011〉 Tilt Grain Boundaries in Silicon
作者:
M. Kohyama,
R. Yamamoto,
M. Doyama,
期刊:
physica status solidi (b)
(WILEY Available online 1986)
卷期:
Volume 137,
issue 1
页码: 11-20
ISSN:0370-1972
年代: 1986
DOI:10.1002/pssb.2221370102
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractThe structures and energies of a series of symmetrical 〈011〉 tilt grain boundaries in silicon are calculated for the first time using the tight‐binding type electronic theory (the bond orbital model). The boundary energies are highly dependent on the types and arrangements of the structural units which consist of 5‐, 6‐, 7‐, and 8‐membered rings of atoms. The boundary structures in the range 0° ≦ 0 ≦ 70.53° are analyzed in detail by the structural unit model, and it is shown that the comparatively simple structures of special boundaries, such as the Σ = 9 (122) boundary, a
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