Application of polymer–bisazide composite system negative resists to electron beam lithography
作者:
Katsumi Tanigaki,
Masayoshi Suzuki,
Yoshitake Ohnishi,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1985)
卷期:
Volume 3,
issue 6
页码: 1594-1599
ISSN:0734-211X
年代: 1985
DOI:10.1116/1.582945
出版商: American Vacuum Society
关键词: POLYMERS;LITHOGRAPHY;ELECTRON COLLISIONS;BACKSCATTERING;SENSITIVITY;COMPOSITE MATERIALS;MOLECULAR WEIGHT;DEPTH PROFILES;ELECTRON BEAMS;Polystyrene
数据来源: AIP
摘要:
Pattern profiles achieved in composite resists of a polymer and a bisazide compound tend to be rectangular, in spite of electron backscattering from substrates. This phenomenon is explained by the bisazide concentration dependence of the composite resist sensitivity to electron beam and the depth profile of bisazide distribution in a polymer film. An optimum amount of bisazide compound, needed to obtain the highest sensitization, exists. It does not depend on molecular weight, but on the kind of polymers used. An excessive amount of bisazide compound incorporation is found to reduce sensitivity. Bisazide compounds distribute to a great extent in the vicinity of a substrate during a prebaking process. These factors reduce the backscattering problem taking place in electron beam lithography to obtain resist patterns with vertical walls.
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