This paper is concerned with an investigation of the electrical,the galvanomagnetic, and the thermoelectric properties of pyrolyticgraphites whose morphological features are conditioned bythe deposition temperature, the heat treatment, and the dopinglevel.(1) Basal-plane magnetoresistance andc-direction specific resistanceof deposits prepared at temperatures ranging from 1900°to 2500°C point to a remarkable improvement of the crystallites'alignment with rising deposition temperature. In both crystallographicdirections the Seebeck coefficient closely follows semi-empiricalpredictions based on the two-dimensional model of the&pgr;-electron bands. The Fermi level of a standard deposit (2100°C)is at 0.025 eV below the valence-band edge and thus indicates thatcrystal defects trap about7.5×1018 electrons/cm3at room temperature;this figure is in accord with a Hall coefficient of0.33 cm3/C.The average in-plane mobility(930 cm2/V-sec)correspondsto a mean free path of the order of the crystallite diameter (250 Å).(2) Post-deposition treatment at temperatures above 2500°Cresults in (a) a rapid drop of the room-temperature basal-planeresistivity down to 50 &mgr;&OHgr;-cm or less, (b) a Hall effect conversionfromptontype in the early stages of graphitization, and (c) atrend toward negative Seebeck coefficients in the layer planes. Inconjunction with low-field magnetoresistance measurements theseresults can be described in terms ofsemimetallicconcepts, thesimultaneous presence of holes and electrons with equal concentrations(6×1018 cm−3at room temperature) stemming from aslight band overlap. Average mobilities imply that the carrier behaviorapproaches single-crystal characteristics ( ≈ 104 cm2/V-secat room temperature) after heat treatment above 3000°C. Normalto the layers, the specific resistance always exceeds 0.1 &OHgr;-cm, whichpoints to amolecularconduction process in this direction.(3) An incorporation of boron into the carbon-hexagon networkslowers the electrical resistance of graphite particularly inthecdirection (twenty-fold decrease at a composition of 0.6at.%B); concurrently the two temperature coefficients becomeapproximately equal to zero. In the rigid-lattice approximationband-population figures derived from the resistivity temperaturedependence reflect the Hall coefficient behavior, the peak occurringat an equivalent boron content of 0.04%. The ionization efficiencyis of the order of 50% with a Fermi level depressed by more than0.1 eV. Thermoelectric power measurements in thecdirectionaccord with the view that charge transport across the layer planesinvolves most of the excess holes, and reveal that boron enhancesthe Seebeck anisotropy of graphite.