Critical layer thickness in strained Ga1−xInxAs/InP quantum wells
作者:
H. Temkin,
D. G. Gershoni,
S. N. G. Chu,
J. M. Vandenberg,
R. A. Hamm,
M. B. Panish,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 16
页码: 1668-1670
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.102231
出版商: AIP
数据来源: AIP
摘要:
We use a combination of electrical, optical, and structural characterization techniques to determine the critical layer thickness of strained Ga1−xInxAs/InP quantum wells. Well compositions covering the entire range of strain available, from −3.8% (GaAs) to +3.2% (InAs), were investigated. We find that the critical layer thickness in this material system is unambiguously described by the classical Matthews and Blakeslee force balance model [J. Cryst. Growth27, 118 (1974)]. Reverse leakage current of strained‐well samples grown in ap‐i‐nconfiguration is shown to be the most direct and reliable measure of the pseudomorphic limit.
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