Titanium disilicide films were sputter deposited from a composite TiSi2.1target on ⟨111⟩ bare silicon wafers both at room temperature and at 600 °C. The room temperature as‐deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as‐deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.