Electron spin resonance of amorphous silicon
作者:
U. Voget‐Grote,
J. Stuke,
H. Wagner,
期刊:
AIP Conference Proceedings
(AIP Available online 1976)
卷期:
Volume 31,
issue 1
页码: 91-96
ISSN:0094-243X
年代: 1976
DOI:10.1063/1.30796
出版商: AIP
数据来源: AIP
摘要:
For differently prepared and for ion‐bombarded samples the behavior of linewidth, lineshape and saturation has ben studied. A close relation between the temperature dependent part of the linewidth and the hopping conductivity is found. The temperature independent contribution at low temperatures varies considerably with preparation conditions, but only little with spin density. At constant temperature the saturation power increases with rising conductivity of the samples indicating that the spin‐lattice relaxation is strongly enhanced by hopping.
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