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Electron spin resonance of amorphous silicon

 

作者: U. Voget‐Grote,   J. Stuke,   H. Wagner,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1976)
卷期: Volume 31, issue 1  

页码: 91-96

 

ISSN:0094-243X

 

年代: 1976

 

DOI:10.1063/1.30796

 

出版商: AIP

 

数据来源: AIP

 

摘要:

For differently prepared and for ion‐bombarded samples the behavior of linewidth, lineshape and saturation has ben studied. A close relation between the temperature dependent part of the linewidth and the hopping conductivity is found. The temperature independent contribution at low temperatures varies considerably with preparation conditions, but only little with spin density. At constant temperature the saturation power increases with rising conductivity of the samples indicating that the spin‐lattice relaxation is strongly enhanced by hopping.

 

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