Selective growth of GexSi1−xon Si is demonstrated for the first time using a pulsed laser induced epitaxy technique, combined with either standard oxide or liftoff patterning processes. Two different dimensions of Ge0.12Si0.88/Si lateral wells are formed, 3.5 &mgr;m wide by 1700 A˚ deep, and 6 &mgr;m wide by 1300 A˚ deep. High‐resolution transmission electron microscopy, combined with energy‐dispersive x‐ray imaging, reveals a well‐defined two‐dimensional (2D) Ge redistribution profile with no significant line or surface defects observed. The 2D Ge well distribution profiles, governed by heat and mass transport during the laser processing, are discussed.