By reversing the bias of a field emitter with a volcano‐shaped gate, it is demonstrated that emission occurs from the rim of the gate. The gate‐to‐emitter distance of this structure is defined by the thickness of the insulating film between the electrodes and not by expensive photolithographic techniques. By enlarging the gate diameter to printed circuit board‐type dimensions, in principle, low cost, large area field emitter arrays can be fabricated. The process is being demonstrated on a silicon substrates and initial emission data are being presented. The article concludes by demonstrating one transfer path of this technology onto an inexpensive glass substrate.