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Electroluminescence and photovoltaic detection in Cd‐implanted CuInSe2p‐njunction diodes

 

作者: Phil Won Yu,   Y. S. Park,   S. P. Faile,   J. E. Ehret,  

 

期刊: Applied Physics Letters  （AIP Available online 1975）
卷期: Volume 26, issue 12  

页码: 717-719

 

ISSN:0003-6951

 

年代: 1975

 

DOI:10.1063/1.88048

 

出版商: AIP

 

数据来源: AIP

 

摘要:

p‐njunction diodes have been prepared by the ion implantation of Cd intop‐type CuInSe2. Electroluminescence is observed near 1.3 &mgr; with internal quantum efficiency of 15&percent; at 77 °K and ∼0.1&percent; at room temperature. The photovoltaic response of typical diodes has a quantum efficiency of 60–70&percent; in the wavelength region 0.7–1.1 &mgr;.

 

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