Rod‐like defects in annealed oxygen rich silicon crystals grown by the Czochralski method were investigated by means of transmission electron microscopy. The rod‐like defect has an apparent Burgers vector along ⟨100⟩ and gives a dipole‐like contrast. The rod defect plane is ⟨100⟩ and its character is found to be extrinsic. The clearly resolved dipoles associated with the rod‐like defect consist of perfect dislocations and are interstitial in character. The rod‐like defects are tentatively attributed to some form of SiOxprecipitate.