Hole transport properties of resistive hydrogenated amorphous silicon (1012&OHgr; cm) are studied by a pulsed photoconductivity technique. Transit time is analyzed by the Scher–Montroll plotting method. Estimation of mobility is done with photocurrent measurement under a space‐charge‐limited condition, and it is confirmed that the mobility value measured under this condition agrees with the calculated value found from space‐charge‐limited current. With no space‐charge effect, temperature dependence and electric field dependence of transit time is represented by &tgr;=&tgr;0 E−1/&agr;’ exp(&Dgr;/kT).