An enhanced‐overpressure capless annealing technique suitable for annealing ion‐implanted InP at temperatures of 900 °C is described. The technique utilizes a Sn‐coated InP wafer and is based on the same principle as the In‐Sn‐P liquid‐solution method for eliminating InP surface degradation prior to epitaxial growth. InP samples implanted with 140 keV, 1014cm−2Si+and annealed at 900 °C for 10 s exhibited improved electrical characteristics over samples annealed at 750 °C for 5 min using conventional encapsulation techniques.