This letter reports a new way of preparing wafer sized SiGe quantum dots on an ordered mesoporous sol gel silica coated Si. It was found from x-ray diffraction that very good regular layers of mesoscopic sized SiGe quantum dots can be formed in the silica. Initial low temperature photoluminescence measurements show much improved light emission of the buried dots. This technique is a potential low cost method for producing quantum dot arrays. ©1997 American Institute of Physics.