Field‐effect density of states ina‐(Si,Ge):H films
作者:
P. Singh,
E. A. Fagen,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 2
页码: 692-695
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337416
出版商: AIP
数据来源: AIP
摘要:
We report field‐effect measurements of the density‐of‐states (DOS) distribution in the last‐deposited surface of undoped glow‐dischargea‐(Si,Ge):H alloy films containing up to 15% Ge. Over the energy range investigated (Ef≤E≤Ef+0.4 eV) the DOS exhibits a peak approximately 0.7 eV belowEc, and the total number of midgap states increases monotonically by a factor of 2 with Ge content. No structure specifically attributable to Ge defect states is seen. These results are interpreted in terms of a diphasic microstructural model of the alloy films.
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