The effects ofN2annealing on the physical properties of room-temperature-deposited ion plating (IP) oxide have been characterized. As-deposited IP oxide exhibits higher refractive index and dielectric constant values than high-temperature-annealed IP oxide. Strained bonds existing in as-deposited oxide can be relaxed byN2annealing depending on the annealing temperature. After annealing at 800 °C, the physical characteristics of IP oxide are comparable to those of thermal oxide. ©1997 American Institute of Physics.