High temperature Hall‐effect apparatus
作者:
C. Wood,
A. Lockwood,
A. Chmielewski,
J. Parker,
A. Zoltan,
期刊:
Review of Scientific Instruments
(AIP Available online 1984)
卷期:
Volume 55,
issue 1
页码: 110-113
ISSN:0034-6748
年代: 1984
DOI:10.1063/1.1137581
出版商: AIP
数据来源: AIP
摘要:
A high‐temperature Hall‐effect apparatus is described which allows measurements up to temperatures greater than 1200 K using the van der Pauw method. The apparatus was designed for measurements on refractory materials having high charge carrier concentrations and generally low mobilities. Pressure contacts are applied to the samples. Consequently, special contacting methods, peculiar to a specific sample material, are not required. The apparatus has been semiautomated to facilitate measurements. Results are presented onn‐ andp‐type silicon.
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