We report on room‐temperature measurements of electron and hole mobilities perpendicularly to the layers of a GaAs/AlGaAs superlattice inserted in an‐i‐nphotoconductor as the intrinsic region. The dynamical behavior of the structure is described by means of a numerical simulation which solves the classical drift‐diffusion transport equations. We discuss the electron and hole mobilities, &mgr;n=120 cm2/(V s) and &mgr;p=12.5 cm2/(V s) respectively, by referring to the two distinct mechanisms of Bloch and hopping conduction, as well as to the peculiar electronic properties of the superlattices.