Experiments have been performed in which the angle of arrival of the Ge vapor has been varied from 90° to 45°. Three differences have been noted in the experiments to date: 1) there is a measurable change in the photomission energy distributions (suggesting a corresponding change in electronic structure); 2) the crystallization temperature is increased by over 100° K at 45° incidence and, 3) the 45° films are much more porous than the 90° films as judged from the effect of atmospheric exposure on electrical conductivity.