首页   按字顺浏览 期刊浏览 卷期浏览 Etch pits and dislocation in {1¯012} Czochralski sapphire wafers
Etch pits and dislocation in {1¯012} Czochralski sapphire wafers

 

作者: K. M. Kim,   S. H. McFarlane,  

 

期刊: Journal of Applied Physics  （AIP Available online 1978）
卷期: Volume 49, issue 12  

页码: 6171-6172

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.324544

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The reliability of fused KOH for revealing dislocations in the (1¯012) rhombohedral plane in Czochralski‐grown sapphire single crystals was investigated by using x‐ray‐transmission topography. It was found that the etch pits represent closely the dislocations in the (1¯012) sapphire, although a one‐to‐one correspondence was not established.

 

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