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Criteria for use of electron beam charging technique for very large scale integration process inspection

 

作者: Keith A. Jenkins,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 6  

页码: 2431-2435

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586035

 

出版商: American Vacuum Society

 

关键词: ELECTRON BEAMS;INSPECTION;VLSI;SCANNING ELECTRON MICROSCOPY;BEAM CURRENTS;DEFECTS;SURFACES

 

数据来源: AIP

 

摘要:

A mathematical description of the method of testing by electron beam charging is used to clearly specify its measurement capabilities. The scanning electron microscopy parameters of beam current, frame scan time, and magnification, are used to derive the requirements necessary to distinguish between shorted and isolated structures.  

 

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