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Calculated performance ofp+nInP solar cells with In0.52Al0.48As window layers

 

作者: R. K. Jain,   G. A. Landis,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 20  

页码: 2555-2557

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105951

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have calculated the performance of indium phosphide solar cells with lattice matched wide band‐gap In0.52Al0.48As window layers using the PC‐1D computer code. The conversion efficiency ofp+nInP solar cells is improved significantly by the window layer. No improvement is seen forn+pstructures. The improvement in InP cell efficiency was studied as a function of In0.52Al0.48As layer thickness. The use of the window layer improves both the open circuit voltage and short circuit current. For a typical In0.52Al0.48As window layer thickness of 20 nm, the cell efficiency improves in excess of 27% to a value of 18.74%.

 

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