Calculated performance ofp+nInP solar cells with In0.52Al0.48As window layers
作者:
R. K. Jain,
G. A. Landis,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 20
页码: 2555-2557
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105951
出版商: AIP
数据来源: AIP
摘要:
We have calculated the performance of indium phosphide solar cells with lattice matched wide band‐gap In0.52Al0.48As window layers using the PC‐1D computer code. The conversion efficiency ofp+nInP solar cells is improved significantly by the window layer. No improvement is seen forn+pstructures. The improvement in InP cell efficiency was studied as a function of In0.52Al0.48As layer thickness. The use of the window layer improves both the open circuit voltage and short circuit current. For a typical In0.52Al0.48As window layer thickness of 20 nm, the cell efficiency improves in excess of 27% to a value of 18.74%.
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