GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition
作者:
D. Fekete,
D. Bour,
J. M. Ballantyne,
L. F. Eastman,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 11
页码: 635-637
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98104
出版商: AIP
数据来源: AIP
摘要:
A self‐aligned GaAs/GaAlAs tapered laser with a tapered quantum well active region is described. The laser is grown by low pressure metalorganic chemical vapor deposition in a horizontal reactor. The effect of the tapered quantum well is in concentrating the injected charges in the modal volume and thus 6.2 mA threshold current is obtained. At a high power level the laser operates in single longitudinal and transversal modes.
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