Thermally induced accumulation of silicon on palladium silicide surfaces as studied by Auger electron spectroscopy
作者:
K. Oura,
S. Okada,
T. Hanawa,
期刊:
Applied Physics Letters
(AIP Available online 1979)
卷期:
Volume 35,
issue 9
页码: 705-706
ISSN:0003-6951
年代: 1979
DOI:10.1063/1.91262
出版商: AIP
数据来源: AIP
摘要:
A clean surface of a palladium silicide grown on a Si(111) plane has been studied by Auger electron spectroscopy. Heat treatment of the silicide in the temperature range 250–600 °C causes the accumulation of a thin layer of elementary Si over its surface. The accumulated thickness has been estimated to be about 3 A˚ and does not depend on heating temperatures and periods examined.
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