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Composition dependence of lattice spacing for low dislocation density undoped liquid encapsulated Czochralski GaAs crystals

 

作者: K. Usuda,   S. Yasuami,   T. Fujii,   Y. Higashi,   H. Kawata,   M. Ando,  

 

期刊: Journal of Applied Physics  （AIP Available online 1991）
卷期: Volume 69, issue 1  

页码: 182-184

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.347740

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Crystals with varied composition were pulled by the As‐partial‐pressure controlled liquid encapsulated Czochralski method. The dislocation density was found to be as low as 2×103cm−2at the cores of the crystals. Lattice spacing (d) was measured with a precision of &Dgr;d/d∼ 5.9 × 10−6using synchrotron radiation. For a variation of 7×10−5in the As‐atom fraction in the crystals, the lattice spacing varied by less than 1×10−5A˚.

 

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