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Drift mobility, electron trapping, and diffusion‐limited kinetics in sulfur‐sensitized AgBr microcrystals

 

作者: R. J. Deri,   J. P. Spoonhower,  

 

期刊: Journal of Applied Physics  (AIP Available online 1985)
卷期: Volume 57, issue 8  

页码: 2806-2811

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335425

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The room‐temperature photoelectron kinetics in 1.3‐ and 0.4‐&mgr;m AgBr octahedral emulsion microcrystals have been investigated for time scales ranging from several nanoseconds to several microseconds after exposure. Two first‐order decay processes were observed in 1.3‐&mgr;m octahedra. The fast process is attributable to relatively shallow electron trapping that equilibrates with thermal detrapping after ∼60 nsec; the longer decay may involve ionic processes. Sulfur sensitization of the emulsion enhanced the fast electron decay rate (decay time=14 nsec). At higher levels of sulfur sensitization, the decay rate did not change with increasing sulfur levels; such behavior can indicate diffusion‐limited surface trapping. A bulk‐to‐surface electron drift mobility of 0.8 cm2/V sec on nanosecond time scales has been deduced from these kinetics. Implications of the data to current theories of photographic image formation and sulfur sensitization are discussed.

 

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