Drift mobility, electron trapping, and diffusion‐limited kinetics in sulfur‐sensitized AgBr microcrystals
作者:
R. J. Deri,
J. P. Spoonhower,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 8
页码: 2806-2811
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335425
出版商: AIP
数据来源: AIP
摘要:
The room‐temperature photoelectron kinetics in 1.3‐ and 0.4‐&mgr;m AgBr octahedral emulsion microcrystals have been investigated for time scales ranging from several nanoseconds to several microseconds after exposure. Two first‐order decay processes were observed in 1.3‐&mgr;m octahedra. The fast process is attributable to relatively shallow electron trapping that equilibrates with thermal detrapping after ∼60 nsec; the longer decay may involve ionic processes. Sulfur sensitization of the emulsion enhanced the fast electron decay rate (decay time=14 nsec). At higher levels of sulfur sensitization, the decay rate did not change with increasing sulfur levels; such behavior can indicate diffusion‐limited surface trapping. A bulk‐to‐surface electron drift mobility of 0.8 cm2/V sec on nanosecond time scales has been deduced from these kinetics. Implications of the data to current theories of photographic image formation and sulfur sensitization are discussed.
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