Microstructural characterization of &agr;‐GaN films grown on sapphire by organometallic vapor phase epitaxy
作者:
W. Qian,
M. Skowronski,
M. De Graef,
K. Doverspike,
L. B. Rowland,
D. K. Gaskill,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 10
页码: 1252-1254
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113253
出版商: AIP
数据来源: AIP
摘要:
Microstructure of &agr;‐GaN films grown by organometallic vapor phase epitaxy on sapphire substrates using low temperature AlN (or GaN) buffer layers has been studied by transmission electron microscopy. The defects which penetrate the GaN films are predominantly perfect edge dislocations with Burgers vectors of the 1/3〈112¯0〉 type, lying along the [0001] growth direction. The main sources of threading dislocations are the low angle grain boundaries, formed during coalescence of islands at the initial stages of GaN growth. The grain sizes range from 50 to 500 nm, with in‐plane misorientations of less than 3°. The nature of these threading dislocations suggests that the defect density would not likely decrease appreciably at increasing film thickness, and the suppression of these dislocations could be more difficult. ©1995 American Institute of Physics.
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