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Silicon nanopillars formed with gold colloidal particle masking

 

作者: P. A. Lewis,   H. Ahmed,   T. Sato,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1998)
卷期: Volume 16, issue 6  

页码: 2938-2941

 

ISSN:1071-1023

 

年代: 1998

 

DOI:10.1116/1.590322

 

出版商: American Vacuum Society

 

关键词: Si;Au

 

数据来源: AIP

 

摘要:

Silicon nanopillars were fabricated by a novel natural lithography technique utilizing a gold colloidal particle monolayer as an etch mask. UsingSiCl4based reactive ion etching (RIE), silicon nanopillars with high density and uniformity in height and shape were obtained with 15 and 10 nm diam gold colloidal particles. The uniform pillars obtained from the 15 nm colloidal gold etch mask were subsequently sharpened to less than 5 nm diam tips by oxidation. 5 nm diam colloids were used to obtain nonuniform 5 nm diam pillars directly by RIE, but with 2 nm colloids the limit of pillar formation was reached. The pillars were also fabricated in selected areas by lithographic patterning of the substrate.

 

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